In a new study, researchers from the U.S. Department of Energy’s (DOE) Argonne and Brookhaven National Laboratories observed the formation of two kinds of defects in individual nanowires, which are smaller in diameter than a human hair.
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In a semiconductor, electrons can be excited by absorbing laser light. Advances during the past decade enabled measuring this fundamental physical mechanism on timescales below a femtosecond (10-15 s). ETH physicists now for the first time resolved the response of electrons in gallium arsenide at the attosecond (10-18 s) timescale, and gained unexpected insights for future ultrafast opto-electronic devices with operation frequencies in the petahertz regime.
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