Tag: Gallium Arsenide

A milestone in petahertz electronics

In a semiconductor, electrons can be excited by absorbing laser light. Advances during the past decade enabled measuring this fundamental physical mechanism on timescales below a femtosecond (10-15 s). ETH physicists now for the first time resolved the response of electrons in gallium arsenide at the attosecond (10-18 s) timescale, and gained unexpected insights for future ultrafast opto-electronic devices with operation frequencies in the petahertz regime.

Read More

Categories

Newsletter

Documentary

Video Services For Science & Technology Sectors

Become a Patron

Video Services For Science & Technology Sectors